2008. 3. 26 1/3 semiconductor technical data mje13005f triple diffused npn transistor revision no : 6 switching regulator application. high voltage switching application. high speed dc-dc converter application. fluorescent light ballastor application. features h excellent switching times : t on =0.8 s(max.), t f =0.9 s(max.), at i c =2a h high collector voltage : v cbo =700v. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 --1ma dc current gain h fe (1) (note) v ce =5v, i c =1a 18 - 35 h fe (2) v ce =5v, i c =2a 10 - - collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.2a - - 0.5 v i c =2a, i b =0.5a - - 0.6 i c =4a, i b =1a --1 base-emitter saturation voltage v be(sat) i c =1a, i b =0.2a - - 1.2 v i c =2a, i b =0.5a - - 1.6 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 -65-pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on - - 0.8 s storage time t stg --4 s fall time t f - - 0.9 s characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9v collector current dc i c 4 a pulse i cp 8 base current i b 2a collector power dissipation (tc=25 ? ) p c 30 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : h fe classification r:18 q 27, o:23 q 35
2008. 3. 26 2/3 mje13005f revision no : 6
2008. 3. 26 3/3 mje13005f revision no : 6
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